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Online ISSN: 2578-3769


Volume 4, Issue 1: 21040103, 2021 | PDF
Research Article
Published: March 31, 2021
Abstract: China's IC industry has been flourishing in recent years, huge market demand together with government investments are the major driving forces for this development. The status and development momen...
Recent Advances in Organic-inorganic Hybrid Photoresists
Authors: Zhihao Wang, Xindi Yao, Huiwen An et al.
Institution:Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China
Keywords:Organic-inorganic hybrid photoresist;EUV lithography;nanocluster;nanoparticle;organometallic complex
Volume 4, Issue 1: 21040101, 2021 | PDF
Research Article
Published: March 28, 2021
Abstract: Photoresists are radiation-sensitive materials used for forming patterns to build up IC devices. To date, most photoresists have been based on organic polymers, which have been dominating the semic...
Fast and Robust DCNN Based Lithography SEM Image Contour Extraction Models
Authors: Tao Zhou, Xuelong Shi, Chen Li et al.
Institution:Shanghai Integrated Circuits R, &, D Center Co, ., Ltd, ., Shanghai
Keywords:SEM images;contour extraction;machine leaning (ML);deep convolution neural network (DCNN);edge placement variation
Volume 4, Issue 1: 21040102, 2021 | PDF
Research Article
Published: March 25, 2021
Abstract: Scanning electron microscope (SEM) metrology is critical in semiconductor manufacturing for patterning process quality assessment and monitoring. Besides feature width and feature-feature space dim...
Improvement of Environment Stability of an i-Line Chemically Amplified Photoresist
Authors: Haibo Li, Qian Yang, Jia Sun et al.
Keywords:Chemical amplification;thick film;i-Line;environment stability;Poly (p-hydroxyl styrene);PAB;PEB
Volume 4, Issue 2: 21040201, 2021 | PDF
Research Article
Abstract: An i-Line chemically amplified (ICA) thick film positive resist is reported in this paper. The impact of process conditions on photoresist performance was investigated. Pre-apply bake temperature a...
Guest Editorial: Special Issue on CAD Technologies
Authors: Shiuh-Wuu Lee
Volume 3, Issue 4: 20030401, 2020 | PDF
Research Article
Published: Dec. 30, 2020
BSIM-CMG compact model for IC CAD: from FinFET to Gate-All-Around FET Technology
Authors: Avirup Dasgupta, Chenming Hu
Institution:Department of Electrical Engineering and Computer Science, University of California
Keywords:gate-all-around;GAAFET;FinFET;BSIM;BSIM-CMG;compact model;quantum;nanosheet;3D;transistor
Volume 3, Issue 4: 20030402, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Abstract: We discuss the BSIM-CMG compact model for SPICE simulations of any common multi-gate (CMG) device. This is an industry standard model which has been used extensively for FinFETs IC design and simul...
On the History of the Numerical Methods Solving the Drift Diffusion Model
Authors: Bernd Meinerzhagen
Institution:Technical University Braunschweig
Volume 3, Issue 4: 20030403, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Abstract: In 1964 Hermann Gummel published the first numerical solution method for the one-dimensional Drift Diffusion model. In his seminal paper [1] already the nonlinear iteration method and th...
Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment
Authors: Cristina Medina-Bailon, Tapas Dutta, Fikru Adamu-Lema et al.
Institution:Device Modelling Group, James Watt School of Engineering, University of Glasgow
Keywords:Integrated Simulation Environment;Variability;Drift-Diffusion;Quantum Correction;Kubo-Greenwood;Non-Equilibrium Green’s Function
Volume 3, Issue 4: 20030404, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Abstract: This paper presents the latest status of the open source advanced TCAD simulator called Nano-Electronic Simulation Software (NESS) which is currently under development at the Device Modeling Group ...
First-principles Simulations of Tunneling FETs Based on van der Waals MoTe2/SnS2 Heterojunctions with Gate-to-drain Overlap Design
Authors: Kun Luo, Kui Gong, Jiangchai Chen et al.
Institution:Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
Keywords:2D materials heterojunction;tunnel-FET;gate-to-drain overlap;DFT-NEGF
Volume 3, Issue 4: 20030405, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Abstract: The electronic properties and transport properties of MoTe2/SnS2 heterostructure Tunneling FETs are investigated by the density functional theory coupled with non-equilibrium ...
Material Modeling in Semiconductor Process Applications
Authors: Boris A. Voinov, Patrick H. Keys, Stephen M. Cea et al.
Institution:Logic Technology Development, Intel Corporation, Hillsboro OR
Keywords:TCAD;atomistic modeling;density functional theory;molecular dynamics;kinetic Monte Carlo
Volume 3, Issue 4: 20030406, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Abstract: During the past decade, significant progress has been achieved in the application of material modeling to aid technology development in semiconductor manufacturing companies such as Intel. In this ...