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EUV Lithography: State-of-the-Art Review 59
A Photolithography Process Design for 5 nm Logic Process Flow 17
Key Process Approach Recommendation for 5 nm Logic Process Flow with EUV Photolithography 10
Novel Pattern-Centric Solution for Xtacking<sup>TM</sup> AFM Metrology 9
Current Status of the Integrated Circuit Industry in China ― Overview of Semiconductor Materials Industry 9
EUV Lithography: State-of-the-Art Review 659
The 2017 IRDS Lithography Roadmap 123
A Photolithography Process Design for 5 nm Logic Process Flow 57
Current Status of the Integrated Circuit Industry in China ― IC Manufacturing Industry 46
Current Status of the Integrated Circuit Industry in China ― IC Special Equipment Industry 42
EUV Lithography: State-of-the-Art Review 771
The 2017 IRDS Lithography Roadmap 152
Silicon Nitride Etch via Oxidation Reaction in Fluorocarbon/Oxygen Plasma: A First-Principle Study 77
Current Status of the Integrated Circuit Industry in China ― IC Special Equipment Industry 75
Nitridation-Etch of Silicon Oxide in Fluorocarbon/Nitrogen Plasma: A Computational Study 69
EUV Lithography: State-of-the-Art Review 1062
A Photolithography Process Design for 5 nm Logic Process Flow 271
Current Status of the Integrated Circuit Industry in China ― IC Manufacturing Industry 266
The 2017 IRDS Lithography Roadmap 248
Metrology Challenges in 3D NAND Flash Technical Development and Manufacturing 208
EUV Lithography: State-of-the-Art Review 6203
The 2017 IRDS Lithography Roadmap 2440
An Innovative Method to Improve Model Accuracy by Implementing Multi-models Scheme for 28nm Node and Below 2344
Current Status of the Integrated Circuit Industry in China ― IC Manufacturing Industry 2004
Innovation on Line Cut Methods of Self-aligned Multiple Patterning 1897
Current Status of the Integrated Circuit Industry in China ― IC Special Equipment Industry 8177
Current Status of the Integrated Circuit Industry in China —— IC Design Industry 7999
EUV Lithography: State-of-the-Art Review 7098
The 2017 IRDS Lithography Roadmap 2940
An Innovative Method to Improve Model Accuracy by Implementing Multi-models Scheme for 28nm Node and Below 2344
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Silicon Nitride Etch via Oxidation Reaction in Fluorocarbon/Oxygen Plasma: A First-Principle Study
Authors: Yu-Hao Tsai, Du Zhang, Mingmei Wang
Institution：TEL Technology Center
Keywords：3D-NAND；oxide；nitride；oxynitride；plasma etch；first-principle
doi：10.33079/jomm.18010102
Volume 1, Issue 1: 18010102, 2018 | PDF
Research Article
Published: Sept. 30, 2018
 Views：2048
Details
Abstract： Conducting all-in-one etch process for 3D-NAND fabrication requires close etch rate (E/R) for SiO2 and Si3N4; however, to attain comparable and high etch rate for b...
A Novel High Volume Manufacturing Method for Defect-free and High-yield SiN Micro-sieve Membranes
Authors: Yansong Liu, Chao Zhao, Lisong Dong et al.
Institution：Key Laboratory of Microelectronic Devices, &amp;, Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
Keywords：micro-sieves；high volume manufacturing；defect free；high yield
doi：10.33079/jomm.18010103
Volume 1, Issue 1: 18010103, 2018 | PDF
Research Article
Published: Sept. 30, 2018
 Views：1033
Details
Abstract： Micro-sieves have been widely used in medical treatment, quarantine, environment, agriculture, pharmacy and food processing. However, the manufacturing and yield improvement have been difficult due...

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