Welcome to Journal of Microelectronic Manufacturing!
Issue 1: 21040103, 2021 | PDF
Research Article
Published: March 31, 2021
Abstract: China's IC industry has been flourishing in recent years, huge market demand together with government investments are the major driving forces for this development. The status and development momen...
Recent Advances in Organic-inorganic Hybrid Photoresists
Authors: Zhihao Wang, Xindi Yao, Huiwen An et al.
Institution:Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China
Keywords:Organic-inorganic hybrid photoresist;EUV lithography;nanocluster;nanoparticle;organometallic complex
Issue 1: 21040101, 2021 | PDF
Research Article
Published: March 28, 2021
Abstract: Photoresists are radiation-sensitive materials used for forming patterns to build up IC devices. To date, most photoresists have been based on organic polymers, which have been dominating the semic...
Fast and Robust DCNN Based Lithography SEM Image Contour Extraction Models
Authors: Tao Zhou, Xuelong Shi, Chen Li et al.
Institution:Shanghai Integrated Circuits R, &, D Center Co, ., Ltd, ., Shanghai
Keywords:SEM images;contour extraction;machine leaning (ML);deep convolution neural network (DCNN);edge placement variation
Issue 1: 21040102, 2021 | PDF
Research Article
Published: March 25, 2021
Abstract: Scanning electron microscope (SEM) metrology is critical in semiconductor manufacturing for patterning process quality assessment and monitoring. Besides feature width and feature-feature space dim...
On the History of the Numerical Methods Solving the Drift Diffusion Model
Authors: Bernd Meinerzhagen
Institution:Technical University Braunschweig
Issue 4: 20030403, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Abstract: In 1964 Hermann Gummel published the first numerical solution method for the one-dimensional Drift Diffusion model. In his seminal paper [1] already the nonlinear iteration method and th...
Guest Editorial: Special Issue on CAD Technologies
Authors: Shiuh-Wuu Lee
Issue 4: 20030401, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Enabling Variability-Aware Design-Technology Co-Optimization for Advanced Memory Technologies
Authors: Salvatore M. Amoroso, Plamen Asenov, Jaehyun Lee et al.
Institution:Synopsys Europe, Ltd.
Keywords:DTCO;Statistical Variability;Process Variability;Semiconductor Memories;DRAM;CMOS;Scaling
Issue 4: 20030409, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Abstract: This paper presents a TCAD-based methodology to enable Design-Technology Co-Optimization (DTCO) of advanced semiconductor memories. After reviewing the DTCO approach to semiconductor devices scalin...
Pattern-Centric Computational System for Logic and Memory Manufacturing and Process Technology Development
Authors: Chenmin Hu, Khurram Zafar, Abhishek Vikram et al.
Institution:Anchor Semiconductor, Santa Clara
Keywords:Die-to-Database;Full Chip Decomposition;Machine Learning;Defect Discovery;Pattern Fidelity;Pattern Risk Scoring;OPC Verification;Process Window Qualification
Issue 4: 20030410, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Abstract: Chip designers employ computer-aided design, circuit simulation, and design rule check systems. Lithography engineers employ model-based OPC (Optical Proximity Correction) and model-based print-sim...
Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment
Authors: Cristina Medina-Bailon, Tapas Dutta, Fikru Adamu-Lema et al.
Institution:Device Modelling Group, James Watt School of Engineering, University of Glasgow
Keywords:Integrated Simulation Environment;Variability;Drift-Diffusion;Quantum Correction;Kubo-Greenwood;Non-Equilibrium Green’s Function
Issue 4: 20030404, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Abstract: This paper presents the latest status of the open source advanced TCAD simulator called Nano-Electronic Simulation Software (NESS) which is currently under development at the Device Modeling Group ...
Fast and Accurate Machine Learning Inverse Lithography Using Physics Based Feature Maps and Specially Designed DCNN
Authors: Xuelong Shi, Yan Yan, Tao Zhou et al.
Institution:Shanghai IC Research and Development Center, Shanghai
Keywords:Optimal feature maps;inverse lithography technology (ILT);deep convolution neural network (DCNN)
Issue 4: 20030407, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Abstract: Inverse lithography technology (ILT) is intended to achieve optimal mask design to print a lithography target for a given lithography process. Full chip implementation of rigorous inverse lithograp...
First-principles Simulations of Tunneling FETs Based on van der Waals MoTe2/SnS2 Heterojunctions with Gate-to-drain Overlap Design
Authors: Kun Luo, Kui Gong, Jiangchai Chen et al.
Institution:Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
Keywords:2D materials heterojunction;tunnel-FET;gate-to-drain overlap;DFT-NEGF
Issue 4: 20030405, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Abstract: The electronic properties and transport properties of MoTe2/SnS2 heterostructure Tunneling FETs are investigated by the density functional theory coupled with non-equilibrium ...