Man Gu, Wenjun Li, Haiting Wang et al.
GLOBALFOUNDRIES Inc. US
FinFET performance；parasitic resistance and capacitance；source/drain cavity；cavity implant
Issue 2: 20030201, 2020
Published: June 8, 2020
Fin field-effect transistor (FinFET) technology has been introduced to the mainstream complementary metal-oxide semiconductor (CMOS) manufacturing for low-power and high-performance applications. H...
High-pressure oxidation；Ge oxidation；High mobility channel；Ge/GeO2
interface；Interface trap density
Issue 2: 20030202, 2020
Published: June 29, 2020
On the basis of thermodynamic and kinetic consideration of Ge-O system, high-pressure oxidation (HPO) on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant ...
China's IC industry has been flourishing in recent years, huge market demand together with government investments are the major driving forces for this development. The status and development momen...